Electrical properties of Al₂O₃/ZrO₂/Al₂O₃ gate stack in p-substrate metal oxide semiconductor devicesZHEN XU; KACZER, Ben; DEGRAEVE, Robin et al.Journal of the Electrochemical Society. 2003, Vol 150, Num 5, pp G307-G310, issn 0013-4651Article

Oxygen incorporation in TiN for metal gate work function tuning with a replacement gate integration approachZILAN LI; SCHRAM, Tom; WITTERS, Thomas et al.Microelectronic engineering. 2010, Vol 87, Num 9, pp 1805-1807, issn 0167-9317, 3 p.Article

The 35th International Conference on Micro- and Nano-Engineering (MNE), 28 September-1 October, 2009, Ghent, BelgiumRONSE, Kurt; VAN THOURHOUT, Dries; DE GENDT, Stefan et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, issn 0167-9317, 974 p.Conference Proceedings

Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETsZHIGANG JI; JIAN FU ZHANG; WEI DONG ZHANG et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 3, pp 783-790, issn 0018-9383, 8 p.Article

Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursorsBAYERL, Albin; LANZA, Mario; AGUILERA, Lidia et al.Microelectronics and reliability. 2013, Vol 53, Num 6, pp 867-871, issn 0026-2714, 5 p.Article

Synthesis of large area carbon nanosheets for energy storage applicationsCOTT, Daire J; VERHEIJEN, Maarten; RICHARD, Olivier et al.Carbon (New York, NY). 2013, Vol 58, pp 59-65, issn 0008-6223, 7 p.Article

Fabricating metallic wire grating inside a polymeric substrate by insertion nanoimprintCHEN, Chia-Meng; SUNG, Cheng-Kuo.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 872-875, issn 0167-9317, 4 p.Conference Paper

Fabrication for metal photomask pattern by using fountain-pen nanolithographyONOUE, Miki; USHIJIMA, Hirobumi.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 910-913, issn 0167-9317, 4 p.Conference Paper

Line Width Roughness mitigation in chemically amplified resist by post-litho processesVAGLIO PRET, Alessandro; GRONHEID, Roel.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1127-1130, issn 0167-9317, 4 p.Conference Paper

Lithography on GaMnAs layer by AFM local anodic oxidation in the AC modeJANOUSEK, M; HALADA, J; VOVES, J et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1066-1069, issn 0167-9317, 4 p.Conference Paper

New approach to estimate nanowear test results through nanoindentation testEKWINSKA, M. A; RYMUZA, Z.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1404-1409, issn 0167-9317, 6 p.Conference Paper

Silver/silver-chloride electrode fabrication in closed micro-fluidic capillariesHEUCK, Friedjof; STAUFER, Urs.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1383-1385, issn 0167-9317, 3 p.Conference Paper

Simulation of the nanostructuring of surfaces under ion-beam bombardmentFULGA, Florin; NICOLAU, Dan V.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1455-1457, issn 0167-9317, 3 p.Conference Paper

Three-dimensional pattern transfer on quartz substratesMOHAMED, K; ALKAISI, M. M.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1463-1466, issn 0167-9317, 4 p.Conference Paper

Determination of Work Functions in the Ta_1-xAl_xN_y /HfO₂ Advanced Gate Stack Using Combinatorial MethodologyCHANG, Kao-Shuo; GREEN, Martin L; HATTRICK-SIMPERS, Jason R et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 10, pp 2641-2647, issn 0018-9383, 7 p.Article

An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETsRUSU, Alexandru; SALVATORE, Giovanni; IONESCU, Adrian et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1607-1609, issn 0167-9317, 3 p.Conference Paper

Influence of the electrode radius on the impedance spectra of cell-covered disc electrodeCHO, Sungbo; THIELECKE, Hagen.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 719-721, issn 0167-9317, 3 p.Conference Paper

Inverted tapered pillars for mass sensingMELLI, Mauro; POZZATO, Alessandro; LAZZARINO, Marco et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 730-733, issn 0167-9317, 4 p.Conference Paper

Resonant surface roughness interactions in planar superlensesSCHØLER, Mikkel; BLAIKIE, Richard J.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 887-889, issn 0167-9317, 3 p.Conference Paper

Two-tone metal pattern transfer technique using a single mold surfaceUNNO, Noriyuki; TANIGUCHI, Jun.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1019-1023, issn 0167-9317, 5 p.Conference Paper

2D Angular distributions of ion sputtered germanium atoms under grazing incidenceSEKOWSKI, M; BURENKOV, A; RYSSEL, H et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1497-1499, issn 0167-9317, 3 p.Conference Paper

Fabrication of a conductive nanoscale electrode for functional devices using nanoimprint lithography with printable metallic nanoinkKIM, Youngja; KIM, Geehong; LEE, Jaejong et al.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 839-842, issn 0167-9317, 4 p.Conference Paper

Stainless steel-titania composite micro gear fabricated by soft moulding and dispersing techniqueIMBABY, M. F; JIANG, K.Microelectronic engineering. 2010, Vol 87, Num 5-8, pp 1650-1654, issn 0167-9317, 5 p.Conference Paper

Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel RatesVERHULST, Anne S; VANDENBERGHE, William G; MAEX, Karen et al.IEEE electron device letters. 2008, Vol 29, Num 12, pp 1398-1401, issn 0741-3106, 4 p.Article

New Insights Into Defect Loss, Slowdown, and Device Lifetime EnhancementMENG DUAN; JIAN FU ZHANG; ZHIGANG JI et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 413-419, issn 0018-9383, 7 p.Article